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| HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200s Pulse, 10% Duty DESCRIPTION The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2 GHz to 1.4 GHz. PACKAGE FEATURES * * * High Power Gain Excellent Ruggedness 48V Supply Voltage The device resides in a Surface Mount Transistor Package with a ceramic lid. The SMT package style is qualified for gross leak test - MIL-STD-750D, Method 1071.6, Test Condition C. Unit V V A W C C The innovative Semiconductor Company! ABSOLUTE MAXIMUM RATINGS Symbol VDSS VGS IDSX PD2 TS TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Storage Temperature Junction Temperature Value 105 10 2 116 -65 to +200 200 RUGGEDNESS The HVV1214-25 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR over all phase angles and rated output power and operating voltage across the frequency band of operation. Symbol LMT1 Parameter Load Mismatch Tolerance Test Condition POUT = 25W F = 1400 MHz Max 20:1 Units VSWR THERMAL CHARACTERISTICS Symbol JC1 Parameter Thermal Resistance Max 1.5 Unit C/W ELECTRICAL CHARACTERISTICS Symbol VBR(DSS) IDSS IGSS GP1 IRL1 D1 PD1 Parameter Drain-Source Breakdown Drain Leakage Current Gate Leakage Current Power Gain Input Return Loss Drain Efficiency Pulse Droop Conditions VGS=0V,ID=1mA VGS=0V,VDS=48V VGS=5V,VDS=0V POUT=25W,F=1200,1400MHz POUT=25W,F=1200,1400MHz POUT=25W,F=1200,1400MHz POUT=25W,F=1200,1400MHz Typ 110 <10 <1 17.5 8 49 <0.2 Units V A A dB dB % dB 1.) Under Pulse Conditions: Pulse Width = 200 sec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 15mA 2.) Rated at TCASE = 25C HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 For additional information, visit: www.hvvi.com HVVi Semiconductors, Inc. Confidential (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. April 23 2008 1 HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200s Pulse, 10% Duty PACKAGE DIMENSIONS DRAIN SOURCE The innovative Semiconductor Company! GATE Note: Drawing is not actual size. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 For additional information, visit: www.hvvi.com HVVi Semiconductors, Inc. Confidential (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. April 23 2008 2 |
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